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參數(shù)資料
| 型號： | 2SK4213-ZK-E1-AY |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, MP-3ZK, TO-252, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 148K |
| 代理商： | 2SK4213-ZK-E1-AY |
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SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4213
Document No. D19565EJ1V0DS00 (1st edition)
Date Published December 2008 NS
Printed in Japan
2008
DESCRIPTION
The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 6.0 m
Ω MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 9.5 m
Ω MAX. (VGS = 4.5 V, ID = 20 A)
Low total gate charge
QG = 34 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)
4.5 V drive available
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4213-ZK-E1-AY
Note
2SK4213-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±64
A
Drain Current (pulse)
Note1
ID(pulse)
±192
A
Total Power Dissipation (TC = 25
°C)
PT1
45
W
Total Power Dissipation (TA = 25
°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
21
A
Single Avalanche Energy
Note2
EAS
44
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH
(TO-252)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK422 | 制造商:n/a 功能描述:2SK422 N9H1C |
| 2SK4221 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK4222 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK4227JS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK423 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 500MA I(D) | TO-92VAR |
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