參數(shù)資料
型號： 2SK4147-T2B-AT
元件分類： 小信號晶體管
英文描述： 500 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： LEAD FREE, MINIMOLD, SC-96, 3 PIN
文件頁數(shù)： 6/8頁
文件大?。?/td> 260K
代理商： 2SK4147-T2B-AT
Data Sheet D18741EJ1V0DS
4
2SK4147
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
Drain
Current
A
0
1
2
02
4
6
8
10
Pulsed
4.5 V
VGS = 10 V
VDS
Drain to Source Voltage V
I
D
-Drain
C
ur
rent
-
A
0.0001
0.001
0.01
0.1
1
10
05
10
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
VGS
Gate to Source Voltage V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(o
ff)
–
Ga
te
to
Source
Cut
-off
Voltage
-V
0
1
2
3
4
-75
-25
25
75
125
175
VDS = 10 V
ID = 1 mA
Tch
Channel Temperature °C
|y
fs
|
F
o
rward
T
ransfer
Ad
mittance
S
0.1
1
10
0.01
0.1
1
10
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
ID
Drain Current A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(on)
Dr
ai
nt
oS
our
ce
On
-s
ta
te
Re
si
st
an
ce
Ω
0
1
2
3
4
5
6
0.001
0.01
0.1
1
10
Pulsed
VGS = 4.5 V
10 V
ID
Drain Current A
R
DS
(on)
Dr
ai
nt
oS
our
ce
On
-s
ta
te
Re
si
st
an
ce
Ω
0
2
4
6
8
10
02468
10
Pulsed
ID = 0.5 A
0.25 A
VGS
Gate to Source Voltage V
相關PDF資料
PDF描述
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相關代理商/技術參數(shù)
參數(shù)描述
2SK415 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:HIGH SPEED POWER SWITCHING
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2SK4150TZ-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 0.4A 3-Pin TO-92 T/R 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 250V 0.4A TO-92
2SK4151 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK4151TZ-E 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 150V 1A TO-92
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