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參數(shù)資料
| 型號： | 2SK4119LS |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 21 A, 400 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220FI(LS), 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 2SK4119LS |
2SK4119LS
No. A0830-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
400
V
Zero-Gate Voltage Drain Current
IDSS
VDS=320V, VGS=0V
100
A
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3
5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=10.5A
5
10
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=10.5A, VGS=10V
0.2
0.26
Input Capacitance
Ciss
VDS=30V, f=1MHz
1200
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
310
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
65
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
30
ns
Rise Time
tr
See specified Test Circuit.
115
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
131
ns
Fall Time
tf
See specified Test Circuit.
57
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=21A
47.8
nC
Gate-to-Source Charge
Qgs
VDS=200V, VGS=10V, ID=21A
7.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=21A
29.4
nC
Diode Forward Voltage
VSD
IS=21A, VGS=0V
0.9
1.2
V
Package Dimensions
unit : mm (typ)
7509-002
Switching Time Test Circuit
Avalanche Resistance Test Circuit
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
12 3
10.0
3.2
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
PW=10s
D.C.≤0.5%
P.G
RGS=50
G
S
D
ID=10.5A
RL=19
VDD=200V
VOUT
2SK4119LS
VIN
10V
0V
VIN
50
≥50
RG
VDD
L
10V
0V
2SK4119LS
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| 2SK412 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 10A I(D) | TO-247VAR |
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