參數(shù)資料
型號： 2SK4114
元件分類： JFETs
英文描述： 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： SC-67, 3 PIN
文件頁數(shù)： 2/3頁
文件大小： 250K
代理商： 2SK4114
2SK4114
2006-10-25
2
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±10
A
Gate-source breakdown voltage
V (BR) GSS
IG =±10 A, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 720 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
4.0
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
2.2
2.5
Forward transfer admittance
Yfs
VDS = 20 V, ID = 3 A
1.5
3.5
S
Input capacitance
Ciss
1150
Reverse transfer capacitance
Crss
20
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
110
pF
Rise time
tr
100
Turn-on time
ton
140
Fall time
tf
40
Switching time
Turn-off time
toff
130
ns
Total gate charge
Qg
25
Gate-source charge
Qgs
11
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 5 A
14
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
15
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
900
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/s
5.4
C
Marking
RL =
66.7
0 V
10 V
VGS
VDD 200 V
ID = 3 A
VOUT
50
Duty <= 1%, tw = 10 s
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K4114
Part No. (or abbreviation code)
相關PDF資料
PDF描述
2SK4123LS 18 A, 450 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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2SK4144-S12-AZ 70 A, 60 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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2SK4147-T2B-AT 500 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
2SK4114(Q,T) 功能描述:MOSFET MOSFET N-Ch, 600V, 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK4115 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications
2SK4115(F) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 7A 3-Pin(3+Tab) TO-3PN Cut Tape 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 900V 7A 150W TO-3P(N)
2SK4115(STA1,E,S) 制造商:Toshiba America Electronic Components 功能描述:
2SK4116LS 功能描述:MOSFET N-CH 400V 12A TO-220FI RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
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