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參數(shù)資料
| 型號(hào)： | 2SK4108 |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-16C1B, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 245K |
| 代理商： | 2SK4108 |
2SK4108
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 10 A
—
0.21
0.27
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 10 A
4.0
14
—
S
Input capacitance
Ciss
—
3400
—
Reverse transfer capacitance
Crss
—
25
—
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
—
320
—
pF
Rise time
tr
—
70
—
Turn on time
ton
—
130
—
Fall time
tf
—
70
—
Switching time
Turn off time
toff
—
280
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
70
—
Gatesource charge
Qgs
—
45
—
Gatedrain (“Miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 20 A
—
25
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
20
A
Pulse drain reverse current
(Note 1)
IDRP
—
80
A
Forward voltage (diode)
VDSF
IDR = 20 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
1300
—
ns
Reverse recovery charge
Qrr
IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
20
—
μC
Marking
RL = 20 Ω
VDD 200 V
0 V
VGS
10 V
50
Ω
ID = 10A
出力
Duty <= 1%, tw = 10 μs
Note 4: A line under a Lot No. identifies the indication of product Lab
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The
RoHS is the Directive 2002/95/EC of the European Parliament and of
Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
K4108
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The
RoHS is the Directive 2002/95/EC of the European Parliament and of the
Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4108(F) | 制造商:Toshiba 功能描述:Nch 500V 20A 0.27@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 20A 500V TO3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 20A, 500V, TO3P |
| 2SK4108(F,T) | 功能描述:MOSFET N-Ch FET VDSS 500V RDS 0.21 Ohm Yfs 14S RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK4108(S1V,E,S) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK4108(STA1,E,S) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK4111(Q,T) | 功能描述:MOSFET MOSFET N-Ch, 600V, 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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