參數(shù)資料
型號(hào): 2SK4101FS
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: JFETs
英文描述: 6.4 A, 650 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220F-3FS, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 268K
代理商: 2SK4101FS
2SK4101FS
No. A1366-1/5
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
Low ON-resistance.
High-speed switching.
10V drive.
Avalanche resistance guarantee.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
650
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
IDc *1
Limited only by maximum temperature Tch=150°C
7A
IDpack *2
Tc=25°C (SANYOs ideal heat dissipation condition)*3
6.4
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
28
A
Allowable Power Dissipation
PD
2.0
W
Tc=25°C (SANYOs ideal heat dissipation condition)*3
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
194
mJ
Avalanche Current *5
IAV
6A
Note :
*1 Shows chip capability.
*2 Package limited.
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=6A
*5 L≤10mH, Single pulse
Marking : K4101FS
22410 TK IM TC-00002271 / N2608QB MS IM TC-00001728
SANYO Semiconductors
DATA SHEET
2SK4101FS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
www.semiconductor-sanyo.com/network
Ordering number : ENA1366A
相關(guān)PDF資料
PDF描述
2SK4101FS 6.4 A, 650 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK4113 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK4117LS 15 A, 400 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK4117LS 15 A, 400 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK4144-AZ 70 A, 60 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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