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參數(shù)資料
| 型號： | 2SK4058-ZK-E2-AY |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, MP-3ZK, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 302K |
| 代理商： | 2SK4058-ZK-E2-AY |
Data Sheet D18033EJ2V0DS
2
2SK4058
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 12 A
7
14
S
RDS(on)1
VGS = 10 V, ID = 24 A
6.3
8.0
m
Ω
Drain to Source On-state Resistance
Note
RDS(on)2
VGS = 4.5 V, ID = 24 A
9.8
14.5
m
Ω
Input Capacitance
Ciss
1670
pF
Output Capacitance
Coss
320
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
170
pF
Turn-on Delay Time
td(on)
11
ns
Rise Time
tr
7.5
ns
Turn-off Delay Time
td(off)
39
ns
Fall Time
tf
VDD = 12 V, ID = 24 A
VGS = 10 V
RG = 3
Ω
7.5
ns
Total Gate Charge
QG
31
nC
Gate to Source Charge
QGS
5.1
nC
Gate to Drain Charge
QGD
VDD = 12 V
VGS = 12 V
ID = 48 A
6.5
nC
Gate Resistance
RG
2.4
Ω
Body Diode Forward Voltage
Note
VF(S-D)
IF = 48 A, VGS = 0 V
0.96
1.5
V
Reverse Recovery Time
trr
IF = 48 A, VGS = 0 V
31
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
23
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 μs
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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