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參數(shù)資料
| 型號： | 2SK4035 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIMOLD THIN, SC-96, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 149K |
| 代理商： | 2SK4035 |
Data Sheet D17447EJ1V0DS
2
2SK4035
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1.0 mA
2.5
3.5
4.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 0.25 A
0.2
0.5
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 0.25 A
3.2
4.5
Input Capacitance
Ciss
VDS = 10 V
74
pF
Output Capacitance
Coss
VGS = 0 V
16
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
7
pF
Turn-on Delay Time
td(on)
VDD = 125 V, ID = 0.25 A
7
ns
Rise Time
tr
VGS = 10 V
5
ns
Turn-off Delay Time
td(off)
RG = 10
12
ns
Fall Time
tf
40
ns
Total Gate Charge
QG
VDD = 200 V
4
nC
Gate to Source Charge
QGS
VGS = 10 V
0.9
nC
Gate to Drain Charge
QGD
ID = 0.5 A
2
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 0.5 A, VGS = 0 V
0.84
V
Reverse Recovery Time
trr
IF = 0.5 A, VGS = 0 V
42
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
57
nC
Note Pulsed
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
τ
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4035-A | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK4035-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK4035-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 250V 0.5A 3-Pin SC-96 T/R |
| 2SK4037 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:470 MHz Band Amplifier Applications |
| 2SK4037(TE12L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH PW-X |
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