參數(shù)資料
型號(hào): 2SK4017
元件分類: JFETs
英文描述: 5 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 2-7B2B, 3 PIN
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 246K
代理商: 2SK4017
2SK4017
2005-03-24
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
2SK4017
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drainsource ON-resistance
: RDS (ON) = 0.07 (typ.)
High forward transfer admittance
: |Yfs| = 6.0 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
40.5
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7B2B
Weight: 0.36 g (typ.)
0.6±0.15
0.8 MAX.
2.
3±
0.
12
1.1 MAX.
0.6±0.15
0.6 MAX
0.6 MAX.
1.1±0.2
6.5±0.2
5.
±
0.
1.
5±
0.
2.3
5.
5.2±0.2
0.9
4.
1±
1.
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