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參數(shù)資料
| 型號： | 2SK4006-01L |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 900 V, 1.58 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220AB, TPACK-3 |
| 文件頁數(shù)： | 15/21頁 |
| 文件大小： | 441K |
| 代理商： | 2SK4006-01L |
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H04-004-03
MS5F6095
3 / 21
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Fuji Electric Device Technology Co.,Ltd.
1.Scope
This specifies Fuji Power MOSFET 2SK4006-01L,S,SJ
2.Construction
N-Channel enhancement mode power MOSFET
3.Applications
for Switching
4.Outview
T-Pack L
Outview See to 8/21 page
T-Pack S
Outview See to 9/21 page
T-Pack SJ
Outview See to 10/21 page
5.Absolute Maximum Ratings at Tc=25
C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
Remarks
V
DS
900
V
VDSX
900
V
VGS=-30V
Continuous Drain Current
I
D
A
Pulsed Drain Current
IDP
± 36
A
Gate-Source Voltage
V
GS
± 30
V
I
AR
9
A
E
AS
mJ
E
AR
mJ
Maximum Drain-Source dV/dt
dV
DS/dt
kV/s
Peak Diode Recovery dV/dt
dV/dt
kV/s
Tc=25°C
1.67
Ta=25°C
Operating and Storage
T
ch
150
°C
Temperature range
Tstg
-55 to +150
°C
6.Electrical Characteristics at Tc=25
C (unless otherwise specified)
Static Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
Drain-Source
I
D=250
A
Breakdown Voltage BVDSS
VGS=0V
900
-
V
Gate Threshold
I
D=250
A
Voltage VGS(th)
VDS=VGS
3.0
-
5.0
V
Zero Gate Voltage
V
DS=900V
V
GS=0V
T
ch=25°C
-
25
Drain Current IDSS
V
DS=720V
V
GS=0V
T
ch=125°C
-
250
Gate-Source
V
GS= ± 30V
Leakage Current IGSS
VDS=0V
-
10
100
nA
Drain-Source
ID=4.5A
On-State Resistance RDS(on)
V
GS=10V
-
1.22
1.58
Repetitive
Maximum Avalanche Energy
27.0
Note *3
40
VDS900V
719.1
Note *2
5
Note *4
9
Drain-Source Voltage
A
Maximum Power Dissipation
P
D
270
W
Repetitive and Non-repetitive
Maximum Avalanche Current
Note *1
Non-Repetitive
Maximum Avalanche Energy
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