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參數(shù)資料
| 型號： | 2SK3936 |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 185K |
| 代理商： | 2SK3936 |
2SK3936
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
500
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 11.5 A
0.2
0.25
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 11.5 A
8
16.5
S
Input capacitance
Ciss
4250
Reverse transfer capacitance
Crss
10
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
420
pF
Rise time
tr
12
Turn-on time
ton
45
Fall time
tf
10
Switching time
Turn-off time
toff
80
ns
Total gate charge
Qg
60
Gate-source charge
Qgs
50
Gate-drain charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 23 A
10
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
23
A
Pulse drain reverse current
(Note 1)
IDRP
92
A
Forward voltage (diode)
VDSF
IDR = 23 A, VGS = 0 V
-1.7
V
Reverse recovery time
trr
380
ns
Reverse recovery charge
Qrr
IDR = 23 A, VGS = 0 V,
dIDR/dt = 100 A/μs
2.4
μC
Marking
RL =
17.4
Ω
0 V
10 V
VGS
VDD ≈ 200 V
ID = 11.5 A VOUT
4.7
Ω
Duty
≤ 1%, tw = 10 μs
K3936
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK3936(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 23A TO-3PN |
| 2SK3940(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 75V 70A 3-Pin(3+Tab) TO-3PN Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 75V 70A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFER N-ch 75V 70A 150W TO-3P(N) |
| 2SK3943-ZP-E1-AY | 功能描述:MOSFET N-CH 40V MP-25ZP/TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3944-TD-E | 制造商:SANYO 功能描述:Nch 60V 2A 340m@10V PCP(SC62) Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 2A SOT89 |
| 2SK3947(Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS |
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