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參數(shù)資料
| 型號： | 2SK3935 |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 450 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 224K |
| 代理商： | 2SK3935 |
2SK3935
2005-01-24
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
A
Drain-source breakdown voltage
V (BR) GSS
IG = ±10 A, VGS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 450 V, VGS = 0 V
—
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 8.5 A
—
0.18
0.25
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 8.5 A
2.5
9.5
—
S
Input capacitance
Ciss
—
3100
—
Reverse transfer capacitance
Crss
—
20
—
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
—
270
—
pF
Rise time
tr
—
70
—
Turn-on time
ton
—
130
—
Fall time
tf
—
70
—
Switching time
Turn-off time
toff
Duty ≤ 1%, tw = 10 s
—
280
—
ns
Total gate charge (gate-source
plus gate-drain)
Qg
—
62
—
Gate-source charge
Qgs
—
40
—
Gate-drain (“Miller”) charge
Qgd
VDD ≈ 360 V, VGS = 10 V, ID = 17 A
—
22
—
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
17
A
Pulse drain reverse current
(Note 1)
IDRP
—
68
A
Forward voltage (diode)
VDSF
IDR = 17 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
1400
—
ns
Reverse recovery charge
Qrr
IDR = 17 A, VGS = 0 V
dlDR / dt = 100 A / S
—
21
—
C
Marking
0 V
10 V
VGS
R
L=
24
Ω
VDD ≈ 200 V
ID = 8.5 A Output
50
Ω
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3935
Part No. (or abbreviation code)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3935(Q) | 制造商:Toshiba 功能描述:Nch 450V 17A 0.25@10V TO220SIS Bulk |
| 2SK3935(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 450V, 17A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3936(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 23A TO-3PN |
| 2SK3940(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 75V 70A 3-Pin(3+Tab) TO-3PN Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 75V 70A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFER N-ch 75V 70A 150W TO-3P(N) |
| 2SK3943-ZP-E1-AY | 功能描述:MOSFET N-CH 40V MP-25ZP/TO-263 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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