參數(shù)資料
型號: 2SK3925-01
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: XTAL CER SMT 6X3.5 2PAD
中文描述: 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 93K
代理商: 2SK3925-01
3
2SK3925-01
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
V
Tch [
°
C]
0
20
40
60
80
100
120
140
0
4
8
12
16
20
24
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=34A,Tch=25
°
C
200V
250V
Vcc= 50V
10
-1
10
0
10
1
10
2
10
3
10p
100p
1n
10n
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
VSD [V]
1.00
1.25
1.50
0.1
1
10
100
I
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
μ
s pulse test,Tch=25
°
C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t
ID [A]
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
I
AS
=14A
I
AS
=21A
I
AS
=34A
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=34A
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