參數(shù)資料
型號： 2SK3919-AZ
元件分類： 小信號晶體管
英文描述： 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB
封裝： TO-251, MP-3, 3 PIN
文件頁數(shù)： 5/8頁
文件大?。?/td> 166K
代理商： 2SK3919-AZ
Data Sheet D17078EJ2V0DS
5
2SK3919
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
2
4
6
8
10
-100
-50
0
50
100
150
200
ID = 32 A
Pulsed
VGS = 10 V
Tch - Channel Temperature - °C
C
is
s,
C
os
s,
C
rss
-Capacitance
-pF
100
1000
10000
0.01
0.1
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
,t
r,t
d(
off)
,t
f-
Swi
tching
Time
-ns
1
10
100
1000
0.1
1
10
100
tr
td(off)
td(on)
tf
VDD = 12.5 V
VGS = 10 V
RG = 10
ID - Drain Current - A
V
DS
-
D
rain
to
So
urce
Voltage
-
V
0
5
10
15
20
25
30
020
40
0
2
4
6
8
10
12
VDS
VDD = 20 V
12.5 V
5 V
ID = 64 A, 42 A (at VDD = 5 V)
VGS
QG - Gate Charge - nC
V
GS
-
Gate
to
So
urce
Voltage
-
V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F-
Diode
Fo
rwa
rd
Curren
t-
A
0.01
0.1
1
10
100
1000
00.511.5
VGS = 10 V
0 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
t
rr-
Rev
ers
eRec
ov
ery
Ti
me
-ns
1
10
100
1000
1
10
100
di/dt = 100 A/
s
VGS = 0 V
IF - Diode Forward Current - A
相關(guān)PDF資料
PDF描述
2SK3919 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB
2SK3919-ZK 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SK3920-01 67 A, 120 V, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3927-01SJ 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3927-01S 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3934 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 500V, TO-220SIS
2SK3934(Q) 制造商:Toshiba 功能描述:Nch 500V 15A 0.30@10V TO220SIS Bulk
2SK3934(Q,M) 功能描述:MOSFET MOSFET N-Ch, 500V, 15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3934(STA4,X,M) 制造商:Toshiba America Electronic Components 功能描述:MOSFET
2SK3935 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS 制造商:Distributed By MCM 功能描述:450V 17A 50W Gds Toshiba Fet Sc-67 N-Ch
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*