參數(shù)資料
型號: 2SK3857TV-A
元件分類: 小信號晶體管
英文描述: 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: LEAD FREE, 2-1H1A, VESM2, 3 PIN
文件頁數(shù): 3/5頁
文件大?。?/td> 148K
代理商: 2SK3857TV-A
2SK3857TV
2007-11-01
3
IDSS=150μA
IDSS=330μA
Ta=85℃
Ta=25℃
Ta=-40℃
Gate - Source voltage VGS (V)
ID – VGS
Drain
Cur
rent
I
D
(
A
)
Drain Current IDSS (A)
|Yfs| – IDSS
Forwa
rd
tr
ansfer
admitt
ance
|
Y
fs
|
(
m
S)
0
3
1
2
400
500
Gate-S
ource
Cut
-of
fV
olt
age
V
GS(OFF)
(
V
)
Drain Current IDSS (A)
VGS(OFF) – IDSS
Gate - Source voltage VGS (V)
ID – VGS
Drain
Cur
rent
I
D
(
A
)
0
600
-1.0
-0.8
-0.6
-0.4
-0.2
300
100
200
0
400
500
VDS
=2V
Common Source
Ta
= 25 °C
0
600
-1.0
-0.8
-0.6
-0.4
-0.2
300
100
200
0
400
500
VDS
=2V
Common Source
100
200
300
600
|Yfs|:VDS
=2V
VGS
=0V
IDSS: VDS
=2V
VGS
=0V
Common Source
Ta
= 25 °C
400
500
0
-100
-200
-300
-400
100
200
300
600
400
500
VGS(OFF):VDS
=2V
ID
= 1μA
IDSS:VDS
=2V
VGS
=0V
Common Source
Ta
= 25 °C
-500
Drain - Source voltage VDS (V)
ID – VDS
Drain
Cur
rent
I
D
(
A
)
0
600
0
300
100
200
2.0
400
500
1.0
Common Source
Ta
= 25 °C
IDSS=170μA
VGS = 0 V
– 0.05 V
+ 0.1 V
+ 0.05 V
– 0.1 V
Drain - Source voltage VDS (V)
ID – VDS
Drain
Cur
rent
I
D
(
A
)
0
600
0
300
100
200
2.0
400
500
1.0
Common Source
Ta
= 25 °C
IDSS=330μA
VGS = 0 V
– 0.05 V
+ 0.1 V
+ 0.05 V
– 0.1 V
相關(guān)PDF資料
PDF描述
2SK3862U 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3862S 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3866GS SMALL SIGNAL, FET
2SK3866G 0.33 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3868 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3863(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SK3863(TE16L1,Q) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 5A DP
2SK3868(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:PowerMOS,Nch,Vdss=500V,Id=5A,TO-220SIS
2SK3868(Q,M) 功能描述:MOSFET MOSFET N-Ch, 500V, 5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3869 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS