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參數(shù)資料
| 型號： | 2SK3852-TL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 400 mA, 900 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TP-FA, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2SK3852-TL |
2SK3852
No. A1276-1/5
www.semiconductor-sanyo.com/network
Ordering number : ENA1276
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
80608PE TI IM YOSHIMURA
SANYO Semiconductors
DATA SHEET
2SK3852
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
900
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
0.4
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
0.8
A
Allowable Power Dissipation
PD
1.0
W
Tc=25°C20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
900
V
Zero-Gate Voltage Drain Current
IDSS
VDS=900V, VGS=0V
1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.5
3.5
V
Forward Transfer Admittance
yfs
VDS=20V, ID=0.15A
0.08
0.15
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=0.15A, VGS=10V
50
70
Ω
Marking : K3852
Continued on next page.
Note) Although the protection diode is contained between gate and source, be careful of handling enough.
Preliminary
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