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參數資料
| 型號： | 2SK3844 |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 247K |
| 代理商： | 2SK3844 |
2SK3844
2006-11-17
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
A
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
100
A
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = 20 V
35
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 23 A
4.1
5.8
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 23 A
32
63
S
Input capacitance
Ciss
12400
Reverse transfer capacitance
Crss
700
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1100
pF
Rise time
tr
18
Turn-on time
ton
45
Fall time
tf
35
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 s
200
ns
Total gate charge
(gate-source plus gate-drain)
Qg
196
Gate-source charge
Qgs
148
Gate-drain (“miller”) charge
Qgd
VDD 48 V, VGS = 10 V,ID = 45 A
48
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR1
45
A
Pulse drain reverse current
(Note 1)
IDRP
180
A
Forward voltage (diode)
VDSF
IDR = 45 A, VGS = 0 V
1.5
V
Reverse recovery time
trr
67
ns
Reverse recovery charge
Qrr
IDR = 45 A, VGS = 0 V,
dIDR/dt = 50 A/s
70
nC
Marking
R
L
=1.
3
VDD 30 V
0 V
VGS
10 V
4.
7
ID = 23 A
VOUT
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3844
Part No. (or abbreviation code)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3847-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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