參數(shù)資料
型號(hào): 2SK3799
廠商: Toshiba Corporation
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述: 抗輻射高效,5安培開關(guān)穩(wěn)壓器
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 221K
代理商: 2SK3799
2SK3799
2005-01-24
2
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3799
Part No. (or abbreviation code)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±30 V, V
DS
= 0 V
±10
μA
Drain-source breakdown voltage
V
(BR) GSS
I
G
= ±10
μ
A, V
GS
= 0 V
±30
V
Drain cut-off current
I
DSS
V
DS
= 720 V, V
GS
= 0 V
100
μA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
450
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 4 A
1.0
1.3
Forward transfer admittance
|Y
fs
|
V
DS
= 15 V, I
D
= 4 A
3.5
6.0
S
Input capacitance
C
iss
2200
Reverse transfer capacitance
C
rss
45
Output capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
190
pF
Rise time
t
r
25
Turn-on time
t
on
65
Fall time
t
f
20
Switching time
Turn-off time
t
off
Duty
1%, t
w
= 10 μs
120
ns
Total gate charge (Gate-source
plus gate-drain)
Q
g
60
Gate-source charge
Q
gs
34
Gate-drain (“miller”) charge
Q
gd
V
DD
400 V, V
GS
= 10 V, I
D
= 8 A
26
nC
Source-Drain Ratings and Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
8
A
Pulse drain reverse current
(Note 1)
I
DRP
24
A
Forward voltage (diode)
V
DSF
I
DR
= 8 A, V
GS
= 0 V
1.7
V
Reverse recovery time
t
rr
1700
ns
Reverse recovery charge
Qrr
I
DR
= 8 A, V
GS
= 0 V
dl
DR
/ dt = 100 A / μS
23
μ
C
Marking
0 V
10
V
V
GS
R
L
V
DD
400 V
I
D
= 4
A
Output
4
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