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參數(shù)資料
| 型號： | 2SK3757 |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 450 V, 2.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 230K |
| 代理商： | 2SK3757 |
2SK3757
2009-09-29
1
3
2
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3757
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.9 (typ.)
High forward transfer admittance: |Yfs| = 1.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
2
Drain current
Pulse
(Note 1)
IDP
5
A
Drain power dissipation (Tc
= 25°C)
PD
30
W
Single pulse avalanche energy
(Note 2)
EAR
103
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
3
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
4.17
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 42.8 mH, RG = 25 Ω, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with caution.
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
1: Gate
2: Drain
3: Source
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3757(Q) | 功能描述:MOSFET PW MOSFET N-Ch 450V 2A 2.45 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3758 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220AB |
| 2SK3758(M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 5A 3PIN TO-220AB - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 5A TO-220AB |
| 2SK3758(Q,M) | 功能描述:MOSFET MOSFET N-Ch 500V 5A Rdson Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3759 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220AB |
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