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參數(shù)資料
| 型號： | 2SK3754 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 30 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SC-67, 2-10R1B, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 133K |
| 代理商： | 2SK3754 |
2SK3754
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3754
Relay Drive, DCDC Converter and
Motor Drive Applications
4.5-V gate drive
Low drain-source ON resistance: RDS (ON) = 71 m (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
5
Drain current
Pulse
(Note 1)
IDP
15
A
Drain power dissipation (Tc
= 25°C)
PD
25
W
Single pulse avalanche energy
(Note 2)
EAS
4.0
mJ
Avalanche current
IAR
2.5
A
Repetitive avalanche energy (Note 3)
EAR
2.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
5.0
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD =24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 2.5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3754(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3755-AZ | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 45A 3-Pin(3+Tab) TO-220 |
| 2SK3756(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFER N-ch 7.5V 1A 470MHz PW-Mini |
| 2SK3757(Q) | 功能描述:MOSFET PW MOSFET N-Ch 450V 2A 2.45 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3758 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220AB |
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