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參數(shù)資料
| 型號： | 2SK3699-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 3.7 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 2SK3699-01MR |
3
2SK3699-01MR
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250A
VG
S(
th)
[V
]
Tch [
°C]
0
5
10
15
20
25
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=3.7A,Tch=25
°C
VGS
[V
]
720V
450V
Vcc= 180V
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
C
[
n
F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
IF
[A
]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
s pulse test,Tch=25°C
10
-1
10
0
10
1
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t[
n
s
]
ID [A]
0
255075
100
125
150
0
50
100
150
200
250
300
350
I
AS
=2A
I
AS
=3.7A
I
AS
=3A
E
AS
[m
J]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3699-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK369-BL(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK369GR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK369-GR(F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 10mA 3-Pin TO-92 Bulk |
| 2SK369GR(TPE2,F) | 制造商:Toshiba America Electronic Components 功能描述:LOW NOISE N-CHANNEL JFET - Tape and Reel |
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