參數(shù)資料
型號(hào)： 2SK3694-01L
廠商： FUJI ELECTRIC CO LTD
元件分類(lèi)： JFETs
英文描述： 17 A, 450 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 259K
代理商： 2SK3694-01L
1
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
450
VDSX *5
450
Continuous drain current
ID
±17
Pulsed drain current
ID(puls]
±68
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR
*2
17
Maximum Avalanche Energy
EAS
*1
221.9
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
PD
Ta=25°C
1.67
Tc=25°C
225
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3694-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=450V VGS=0V
VDS=360V VGS=0V
VGS=±30V
ID=8.5A
VGS=10V
ID=8.5A
VDS=25V
VCC=300V ID=8.5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.556
75.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=225V
ID=17A
VGS=10V
L=1.41mH Tch=25°C
IF=17A VGS=0V Tch=25°C
IF=17A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
450
3.0
5.0
25
250
100
0.29
0.38
714
1275
1900
200
300
9.5
14
27
40
27
40
48
72
711
33
50
913
10.5
16
17
1.20
1.80
0.57
6.5
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super FAP-G Series
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
T-Pack
Gate(G)
Source(S)
Drain(D)
200305
*4 VDS 450V
*5 VGS=-30V
<
=
*1 L=1.41mH, Vcc=45V, Tch=25°C See to Avalanche Energy Graph
*2 Tch 150°C
=
<
P4
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