參數(shù)資料
型號(hào): 2SK3659-AZ
元件分類: JFETs
英文描述: 65 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: MP-45F, TO-220, 3 PIN
文件頁數(shù): 4/10頁
文件大小: 207K
代理商: 2SK3659-AZ
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2002
MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D16251EJ2V0DS00 (2nd edition)
Date Published June 2002 NS CP (K)
Printed in Japan
DATA SHEET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5V drive available.
Low on-state resistance,
RDS(on)1 = 5.7 m
MAX. (VGS = 10 V, ID = 40 A)
Low gate charge,
QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A)
Built-in gate protection diode.
Avalanche capability ratings.
Isolated TO-220 package.
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to source voltage (VGS = 0 V)
VDSS
20
V
Gate to source voltage (VDS = 0 V)
VGSS
±20
V
Drain current (DC) (TC = 25°C)
ID(DC)
±65
A
Drain current (pulse)
Note1
ID(pulse)
±260
A
Total power dissipation (TA = 25°C)
PT1
2.0
W
Total power dissipation (TC = 25°C)
PT2
25
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
35
A
Single Avalanche Energy
Note2
EAS
122
mJ
Note 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 10 V, RG = 25 , VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3659
Isolated TO-220
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