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參數(shù)資料
| 型號(hào)： | 2SK3651-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 25 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | 2SK3651-01R |
3
2SK3651-01R
FUJI POWER MOSFET
VGS=f(Qg):ID=25A, Tch=25°C
IF=f(VSD):80s Pulse test,Tch=25°C
t=f(ID):Vcc=72V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th)
[V]
Tch [
°C]
0
10
20
30405060
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS
[V]
96V
72V
Vcc= 36V
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
C
[nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t[ns]
ID [A]
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
IAS=15A
IAS=22A
IAS=37A
EA
S
[
m
J
]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3651-01RSC | 制造商:Fuji Electric 功能描述: |
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| 2SK3658(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 60V 2A SOT89 |
| 2SK3659-AZ | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 20V 65A 3-Pin(3+Tab) TO-220 |
| 2SK365-BL(F) | 制造商:Toshiba 功能描述:Nch -50V 6mA to 14mA 80@10mV MINI Bulk 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin Mini |
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