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參數(shù)資料
| 型號： | 2SK3639-ZK |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 64000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封裝： | MP-3ZK, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 276K |
| 代理商： | 2SK3639-ZK |
Data Sheet D15967EJ3V0DS
2
2SK3639
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 32 A
19
39
S
RDS(on)1
VGS = 10 V, ID = 32 A
4.4
5.5
m
Drain to Source On-state Resistance
Note
RDS(on)2
VGS = 4.5 V, ID = 32 A
5.8
8.5
m
Input Capacitance
Ciss
2400
pF
Output Capacitance
Coss
970
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
350
pF
Turn-on Delay Time
td(on)
13
ns
Rise Time
tr
14
ns
Turn-off Delay Time
td(off)
71
ns
Fall Time
tf
VDD = 10 V, ID = 32 A
VGS = 10 V
RG = 10
22
ns
Total Gate Charge
QG
45
nC
Gate to Source Charge
QGS
7.6
nC
Gate to Drain Charge
QGD
VDD = 16 V
VGS = 10 V
ID = 64 A
11
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 64 A, VGS = 0 V
0.96
V
Reverse Recovery Time
trr
IF = 64 A, VGS = 0 V
40
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
35
nC
Note Pulsed: PW
≤ 350
s, Duty Cycle ≤ 2%
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
τ
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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|---|---|
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