
Power MOSFETs
1
Publication date: December 2004
SJG00042AED
2SK3636
Silicon N-channel power MOSFET
For high-speed switching
■ Features
Avalanche energy capacity guaranteed: EAS > 20 mJ
Gate-source surrender voltage V
GSS = ±30 V guaranteed
High-speed switching: t
f = 50 ns
No secondary breakdown
■ Absolute Maximum Ratings T
C = 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
800
V
Gate-source surrender voltage
VGSS
±30
V
Drain current
ID
±3A
Peak drain current
IDP
±6A
Avalanche energy capability *
EAS
20
mJ
Power dissipation
PD
35
W
Ta
= 25°C
2.0
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = 1 mA, VGS = 0
800
V
Drain-source cutoff current
IDSS
VDS = 640 V, VGS = 0
100
A
Gate-source cutoff current
IGSS
VGS = ±30 V, VDS = 0
±1
A
Gate threshold voltage
Vth
VDS = 25 V, ID = 1 mA
2.0
5.0
V
Forward transfer admittance *
Y
fs
VDS = 25 V, ID = 2 mA
1.5
2.4
V
Drain-source ON resistance *
RDS(on)
VGS = 10 V, ID = 2 mA
3.2
4.0
Diode forward voltage *
VDSF
IDR = 3 A, VGS = 0
1.6
V
Short-circuit forward transfer capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
730
pF
(Common source)
Short-circuit output capacitance
Coss
90
pF
(Common source)
Reverse transfer capacitance
Crss
40
pF
(Common source)
Turn-on delay time
td(on)
VDD = 200 V, ID = 2 A, RL = 100
35
ns
Rise time
tr
VGS = 10 V
60
ns
Fall time
tf
50
ns
Turn-off delay time
td(off)
160
ns
Thermal resistance (ch-c)
Rth(ch-c)
3.6
°C/W
Thermal resistance (ch-a)
Rth(ch-a)
62.5
°C/W
■ Electrical Characteristics T
C = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
1: Gate
2: Drain
3: Source
TO-220D-A1 Package
Note) *:L
= 5 mH, I
L = 3 A, 1 pulse
Internal Connection
G
S
D
Marking Symbol: K3636
1.4±0.2
1.6±0.2
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
12
3
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder
Dip
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en