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參數(shù)資料
| 型號： | 2SK3633 |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 214K |
| 代理商： | 2SK3633 |
2SK3633
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π
MOS IV)
2SK3633
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.)
High forward transfer admittance: |Yfs| = 5.2 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 640 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
800
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
800
V
Gate-source voltage
VGSS
±30
V
DC (Note 1)
ID
7
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
21
A
Drain power dissipation (Tc
= 25°C)
PD
150
W
Single-pulse avalanche energy
(Note 2)
EAS
420
mJ
Avalanche current
IAR
7
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15.7 mH, IAR = 7 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
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| 2SK3633 | 7 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3634-Z-AZ | 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3634-Z-AZ | 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3633(F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 800V 7A 150W TO-3P(N) |
| 2SK3634-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 6A 3-Pin(3+Tab) TO-251 |
| 2SK3634-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 6A 3-Pin(2+Tab) TO-252 |
| 2SK3635-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-251 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-251 |
| 2SK3635-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(2+Tab) TO-252 Cut Tape |
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