參數(shù)資料
型號(hào): 2SK3607-01MR
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: 13 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220F, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 106K
代理商: 2SK3607-01MR
2
Characteristics
2SK3607-01MR
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80s Pulse test,Tch=25°C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80s Pulse test, Tch=25°C
02
46
8
10
12
0
5
10
15
20
25
30
35
40
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID
[A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
0
1
2
3
456
789
10
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
gfs
[S]
ID [A]
Typical Transconductance
0
5
10
15
20
25
30
35
40
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
7.0V
6.5V
RDS(on)
[
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
45
50
Allowable Power Dissipation
PD=f(Tc)
PD
[W
]
Tc [
°C]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
400
I
AS
=11A
I
AS
=7A
I
AS
=18A
EA
S
[m
J
]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
相關(guān)PDF資料
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