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參數(shù)資料
| 型號(hào)： | 2SK3596-01L |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 30 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TPACK-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 257K |
| 代理商： | 2SK3596-01L |
1
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
200
VDSX *5
170
Continuous drain current
ID
±45
Pulsed drain current
ID(puls]
±180
Gate-source voltage
VGS
±30
Non-repetitive Avalanche current
IAS *2
45
Maximum Avalanche Energy
EAS *1
258.9
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
Ta=25°C
1.67
Tc=25°C
270
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3596-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V
ID=15A
VGS=10V
ID=15A
VDS=25V
VCC=48V ID=15A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.463
75.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=100V
ID=30A
VGS=10V
L=205H Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
200
3.0
5.0
25
250
10
100
50
66
12.5
25
1960
2940
260
390
18
27
20
30
17
26
53
80
19
29
51
76.5
15
22.5
16
24
45
1.10
1.65
0.19
1.4
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
=
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=
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=
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*4 VDS
200V
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=
www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V
P4
200304
*1 L=205H, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch 150°C
=
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