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參數(shù)資料
| 型號： | 2SK3594-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 2SK3594-01 |
3
2SK3594-01
FUJI POWER MOSFET
VGS=f(Qg):ID=30A, Tch=25°C
IF=f(VSD):80s Pulse test,Tch=25°C
t=f(ID):Vcc=48V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
160
180
200
RDS(on)
[
m
]
Tch [
°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=15A,VGS=10V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
A
VGS(th)
[V]
Tch [
°C]
0
10
20304050
607080
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS
[V]
Vcc= 100V
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
C
[nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t[ns]
ID [A]
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