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參數資料
| 型號： | 2SK3576 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場效應晶體管高速開關 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 66K |
| 代理商： | 2SK3576 |
Data Sheet D15939EJ1V0DS
2
2SK3576
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
12 V, V
DS
= 0 V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1.0 mA
0.5
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 2.0 A
1.0
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 4.5 V, I
D
= 2.0 A
40
50
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 2.0 A
42
53
m
R
DS(on)3
V
GS
= 2.5 V, I
D
= 2.0 A
56
75
m
Input Capacitance
C
iss
V
DS
= 10 V
250
pF
Output Capacitance
C
oss
V
GS
= 0 V
80
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
60
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 2.0 A
28
ns
Rise Time
t
r
V
GS
= 4.0 V
140
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
110
ns
Fall Time
t
f
180
ns
Total Gate Charge
Q
G
V
DD
= 16 V
3.3
nC
Gate to Source Charge
Q
GS
V
GS
= 4.0 V
0.7
nC
Gate to Drain Charge
Q
GD
I
D
= 4.0 A
1.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 4.0 A, V
GS
= 0 V
0.89
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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相關代理商/技術參數 |
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| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
| 2SK358 | 制造商:Toshiba 功能描述:Bulk |
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