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參數(shù)資料
| 型號(hào)： | 2SK3575 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開(kāi)關(guān)N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | 2SK3575 |
Data Sheet D16261EJ2V0DS
5
2SK3575
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
D
0
2
4
6
8
-50
0
50
100
150
I
D
= 42 A
Pulsed
V
GS
= 4.5 V
10 V
T
ch
- Channel Temperature - °C
C
i
,
o
,
r
10
100
1000
10000
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d
,
r
,
d
,
f
1
10
100
1000
0.1
1
10
100
V
DD
= 10 V
V
GS
= 10 V
R
G
= 10
t
r
t
f
t
d(on)
t
d(off)
I
D
- Drain Current - A
V
D
0
5
10
15
20
25
30
0
20
40
60
80
0
2
4
6
8
10
12
I
D
= 83 A
V
DD
= 24 V
15 V
V
DS
V
GS
Q
G
- Gate Change - nC
V
G
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
= 10 V
0 V
pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
r
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
μ
s
V
GS
= 0 V
I
D
- Drain Current - A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3575-S | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3575-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3575-ZK | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3576 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK3577 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
| 2SK358 | 制造商:Toshiba 功能描述:Bulk |
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