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參數(shù)資料
| 型號(hào)： | 2SK3575-ZK |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開(kāi)關(guān)N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 86K |
| 代理商： | 2SK3575-ZK |
Data Sheet D16261EJ2V0DS
4
2SK3575
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
50
100
150
200
250
300
350
0
0.5
1
1.5
2
V
GS
= 10 V
4.5 V
Pulsed
V
DS
- Drain to Source Voltage - V
I
D
0.01
0.1
1
10
100
1000
0
1
2
3
4
5
V
DS
= 10 V
Pulsed
T
ch
= 150
°
C
75
°
C
25
°
C
55
°
C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
°
C
|
f
0.1
1
10
100
0.1
1
10
100
T
ch
=
55
°
C
25
°
C
75
°
C
150
°
C
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
0
2
4
6
8
10
1
10
100
1000
10 V
V
GS
= 4.5 V
Pulsed
I
D
- Drain Current - A
R
D
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
20
I
D
= 42 A
Pulsed
V
GS
- Gate to Source Voltage - V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3576 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK3577 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK359 | Silicon N-Channel MOS FET |
| 2SK360 | Silicon N-Channel MOS FET |
| 2SK3635-Z | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
| 2SK358 | 制造商:Toshiba 功能描述:Bulk |
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