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參數(shù)資料
| 型號(hào)： | 2SK3573-Z |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 77K |
| 代理商： | 2SK3573-Z |
Data Sheet D16259EJ2V0DS
2
2SK3573
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 42 A
27
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 42 A
2.9
4.0
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 42 A
3.8
6.0
m
Input Capacitance
C
iss
V
DS
= 10 V
4000
pF
Output Capacitance
C
oss
V
GS
= 0 V
1550
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
570
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 42 A
23
ns
Rise Time
t
r
V
GS
= 10 V
23
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
110
ns
Fall Time
t
f
40
ns
Total Gate Charge
Q
G
V
DD
= 16 V
68
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
12
nC
Gate to Drain Charge
Q
GD
I
D
= 83 A
18
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 83 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 83 A, V
GS
= 0 V
77
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
115
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3574 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3574-S | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3574-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3574-ZK | SWITCHING N-CHANNEL POWER MOSFET |
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