參數(shù)資料
型號: 2SK3572
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開關(guān)N溝道功率MOSFET
文件頁數(shù): 2/8頁
文件大?。?/td> 79K
代理商: 2SK3572
Data Sheet D16258EJ2V0DS
2
2SK3572
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 40 A
15
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 40 A
4.4
5.7
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 40 A
7.4
9.9
m
Input Capacitance
C
iss
V
DS
= 10 V
1700
pF
Output Capacitance
C
oss
V
GS
= 0 V
700
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
250
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 40 A
16
ns
Rise Time
t
r
V
GS
= 10 V
14
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
50
ns
Fall Time
t
f
12
ns
Total Gate Charge
Q
G
V
DD
= 16 V
32
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
7.1
nC
Gate to Drain Charge
Q
GD
I
D
= 80 A
7.7
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 80 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 80 A, V
GS
= 0 V
42
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
34
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
相關(guān)PDF資料
PDF描述
2SK3572-S SWITCHING N-CHANNEL POWER MOSFET
2SK3572-Z SWITCHING N-CHANNEL POWER MOSFET
2SK3572-ZK SWITCHING N-CHANNEL POWER MOSFET
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2SK3573 SWITCHING N-CHANNEL POWER MOSFET
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