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參數(shù)資料
| 型號： | 2SK3572-Z-AZ |
| 元件分類： | JFETs |
| 英文描述： | 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-25Z, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 80K |
| 代理商： | 2SK3572-Z-AZ |
Data Sheet D16258EJ2V0DS
4
2SK3572
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID
-
Drai
n
Current
-
A
0
50
100
150
200
250
300
350
01
23
45
6
VGS = 10 V
4.5 V
Pulsed
VDS - Drain to Source Voltage - V
ID
-
Drai
n
Current
-
A
0.01
0.1
1
10
100
1000
0
1
2
3456
7
VDS = 10 V
Pulsed
Tch = 150°C
75°C
25°C
55°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(o
ff)
-
Ga
te
Cut
-of
f
V
o
lt
age
-
V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|y
fs
|
-
Forw
ard
Trans
fe
rA
d
m
it
tanc
e
-
S
0.1
1
10
100
0.1
1
10
100
Tch =
55°C
25°C
75°C
150°C
VDS = 10 V
Pulsed
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
m
0
5
10
15
20
25
1
10
100
1000
10 V
VGS = 4.5 V
Pulsed
ID - Drain Current - A
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
m
0
5
10
15
20
0
5
10
15
20
Pulsed
ID = 40 A
VGS - Gate to Source Voltage - V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3572-ZK-E1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
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