參數資料
型號: 2SK3562
元件分類: JFETs
英文描述: 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-10U1B, SC-67, 3 PIN
文件頁數: 5/6頁
文件大?。?/td> 207K
代理商: 2SK3562
2SK3562
2010-01-29
5
500
400
300
200
100
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
EAS – Tch
A
V
A
LANCHE
EN
ERGY
E
AS
(
m
J)
rth – tw
PULSE WIDTH tw (s)
NO
RMALI
Z
ED
TRANSIENT
THE
R
MAL
IMPEDANCE
r
th
(t
)/R
th
(c
h-c)
Duty=0.5
SINGLE PULSE
15 V
TEST CIRCUIT
WAVEFORM
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 16.8mH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
DRAIN-SOURCE VOLTAGE VDS (V)
SAFE OPERATING AREA
DRAIN
CU
RREN
T
I
D
(A)
0.01
10μ
0.1
1
10
100μ
1m
10m
100m
1
T
PDM
t
Duty
= t/T
Rth (ch-c) = 3.125°C/W
0.2
0.1
0.05
0.02
0.01
0.001
1000
* SINGLE NONREPETITIVE
PULSE
Tc=25℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
ID max (PULSED) *
ID max (CONTINUOUS)
DC OPERATION
Tc
= 25°C
100
μs *
1 ms *
0.1
1
10
100
10
100
VDSS max
0.01
10
相關PDF資料
PDF描述
2SK3568 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
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相關代理商/技術參數
參數描述
2SK3562(Q) 功能描述:MOSFET N-Ch 600V 6A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3562(S4TETV,X,M 制造商:Toshiba 功能描述:TRANSISTOR
2SK3562(STA4,Q) 制造商:Toshiba 功能描述:Nch 600V 6A 1.25@10V TO220SIS Bulk
2SK3562(STA4,Q,M) 制造商:Toshiba 功能描述:TRANSISTOR
2SK3562(STA4,X,S) 制造商:Toshiba 功能描述:TRANSISTOR