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參數(shù)資料
| 型號(hào)： | 2SK3527 |
| 廠商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | N溝道功率MOSFET硅 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 109K |
| 代理商： | 2SK3527 |
2
Characteristics
2SK3527-01
FUJI POWER MOSFET
ID=f(VGS):80μs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80μs Pulse test,Tch=25°C
gfs=f(ID):80μs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80μs Pulse test, Tch=25°C
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
160
180
200
220
240
260
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
0
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
25
30
35
40
45
20V
7.0V
10V
8V
6.5V
6.0V
I
VDS [V]
Typical Output Characteristics
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
I
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
g
ID [A]
Typical Transconductance
0
5
10
15
20
25
30
35
40
45
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
7.0V
6.5V
R
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
6.0V
VGS=
5.5V
-50
-25
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
R
Tch [
°
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8.5A,VGS=10V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3527-01R | MOSFETs |
| 2SK3530 | Fuji Power MOSFET SuperFAP-G series Target Specification |
| 2SK3530-01MR | Fuji Power MOSFET SuperFAP-G series Target Specification |
| 2SK3532-01MR | N-CHANNEL SILICON POWER MOSFET |
| 2SK3538 | Switching Regulator, DC-DC Converter Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3527-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-247;PD 335W;VGS +/-30V |
| 2SK3527-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3528-01R | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-3PF;PD 160W;VGS +/-30V |
| 2SK3528-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3529-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 1.46 Ohms;ID +/-7A;TO-220AB;PD 195W;VGS +/- |
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