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參數(shù)資料
| 型號(hào)： | 2SK3527-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 21 A, 600 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 109K |
| 代理商： | 2SK3527-01 |
1
Item
Drain-source voltage
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
*3 I
F
-I
D
, -di/dt=50A/μs, Vcc=
DSS
, Tch=
=
Ratings
Unit
V
V
A
A
V
A
mJ
kV/μs
kV/μs
W
600
600
±17
±68
±30
17
412
20
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
5
2.50
220
+150
-55 to +150
Operating and storage
temperature range
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3527-01
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=600V V
GS
=0V
DS
=480V V
GS
=0V
V
GS
I
D
=8.5A V
GS
=10V
I
D
=8.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=8.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
600
3.0
V
V
μA
nA
S
pF
nC
A
V
μs
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.568
50.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
V
ch
=25°C
V
ch
=125°C
=±30V
DS
=0V
V
CC
=300V
I
D
=17A
V
GS
=10V
L=2.62mH T
ch
=25°C
I
F
=17A V
GS
=0V T
ch
=25°C
I
F
=17A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
°C
°C
5.0
25
250
100
0.37
10
0.29
20
2280
290
16
26
37
78
13
54
15
20
10
3420
435
24
39
56
117
19
81
23
30
17
0.93
0.7
10.0
1.50
Outline Drawings
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
*1 L=2.62mH, Vcc=60V *2 Tch=
*4 VDS<
GS
=-30V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3527 | N-CHANNEL SILICON POWER MOSFET |
| 2SK3527-01R | MOSFETs |
| 2SK3530 | Fuji Power MOSFET SuperFAP-G series Target Specification |
| 2SK3530-01MR | Fuji Power MOSFET SuperFAP-G series Target Specification |
| 2SK3532-01MR | N-CHANNEL SILICON POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3527-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3528-01R | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-3PF;PD 160W;VGS +/-30V |
| 2SK3528-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3529-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 1.46 Ohms;ID +/-7A;TO-220AB;PD 195W;VGS +/- |
| 2SK3529-01SC-P | 制造商:Fuji Electric 功能描述: |
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