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參數(shù)資料
| 型號： | 2SK3526-01S |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TPACK-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 253K |
| 代理商： | 2SK3526-01S |
3
2SK3526-01L,S,SJ
FUJI POWER MOSFET
VGS=f(Qg):ID=3A, Tch=25°C
IF=f(VSD):80s Pulse test,Tch=25°C
t=f(ID):Vcc=300V, VGS=10V, RG=10
VGS(th)=f(Tch):VDS=VGS,ID=250A
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)
[V]
Tch [
°C]
0
10
203040
5060
0
2
4
6
8
10
12
14
16
18
20
22
24
Qg [nC]
Typical Gate Charge Characteristics
VGS
[V]
480V
300V
Vcc= 120V
10
-1
10
0
10
1
10
2
10
3
1p
10p
100p
1n
10n
C
[F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
0
10
1
10
0
10
1
10
2
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t[ns]
ID [A]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
I
AS
=4A
I
AS
=8A
I
AS
=5A
E
AS
[m
J]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=60V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3527-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-247;PD 335W;VGS +/-30V |
| 2SK3527-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3528-01R | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.29Ohm;ID +/-21A;TO-3PF;PD 160W;VGS +/-30V |
| 2SK3528-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3529-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 1.46 Ohms;ID +/-7A;TO-220AB;PD 195W;VGS +/- |
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