參數(shù)資料
型號(hào): 2SK3499
元件分類(lèi): JFETs
英文描述: 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, 2-9F1C, 4 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 178K
代理商: 2SK3499
2SK3499
2010-04-13
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 400 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
400
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 5.0 A
0.4
0.55
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 5.0 A
4.0
8.0
S
Input capacitance
Ciss
1340
Reverse transfer capacitance
Crss
160
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
490
pF
Rise time
tr
22
Turn-on time
ton
60
Fall time
tf
32
Switching time
Turn-off time
toff
140
ns
Total gate charge
(gate-source plus gate-drain)
Qg
34
Gate-source charge
Qgs
18
Gate-drain (“miller”) charge
Qgd
VDD ≈ 320 V, VGS = 10 V, ID = 10 A
16
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
10
A
Pulse drain reverse current
(Note 1)
IDRP
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
330
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
3.2
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K3499
Lot No.
Note 4
Part No. (or abbreviation code)
Duty
≤ 1%, tw = 10 μs
0 V
10 V
VGS
RL = 40 Ω
VDD ≈ 200 V
ID = 5 A
VOUT
50
Ω
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