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參數(shù)資料
| 型號(hào)： | 2SK3498(2-7B1B) |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 450 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-7B1B, SC-64, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | 2SK3498(2-7B1B) |
2SK3498
2002-09-04
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Drain-source breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
V
Drain cut-OFF current
IDSS
VDS = 400 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 0.5 A
4.2
5.5
Forward transfer admittance
Yfs
VDS = 10 V, ID = 0.5 A
0.3
0.6
S
Input capacitance
Ciss
145
Reverse transfer capacitance
Crss
35
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
80
pF
Rise time
tr
14
Turn-ON time
ton
56
Fall time
tf
26
Switching time
Turn-OFF time
toff
75
ns
Total gate charge
(gate-source plus gate-drain)
Qg
5.7
Gate-source charge
Qgs
3.0
Gate-drain (“miller”) charge
Qgd
VDD 320 V, VGS = 10 V, ID = 1 A
2.7
nC
Source-Drain Ratings and Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
1
A
Pulse drain reverse current
(Note 1)
IDRP
3
A
Forward voltage (diode)
VDSF
IDR = 1 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
650
ns
Reverse recovery charge
Qrr
IDR = 1 A, VGS = 0 V,
dIDR/dt = 100 A/s
14.6
C
Marking
※
Type
K3498
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, tw = 10 s
RL = 400
0 V
10 V
VGS
VDD 200 V
ID = 0.5 A
VOUT
50
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK3499 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications |
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