參數(shù)資料
型號: 2SK3481-S
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOS FET
中文描述: 開關(guān)N溝道功率場效應(yīng)晶體管
文件頁數(shù): 1/8頁
文件大?。?/td> 76K
代理商: 2SK3481-S
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2002
MOS FIELD EFFECT TRANSISTOR
2SK3481
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
D15063EJ1V0DS00 (1st edition)
January 2002 NS CP(K)
DESCRIPTION
The 2SK3481 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 50
m
MAX. (V
GS
= 10
V, I
D
= 15
A)
R
DS(on)2
= 58
m
MAX. (V
GS
= 4.5
V, I
D
= 15
A)
Low C
iss
: C
iss
= 2300
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
100
V
V
A
A
W
W
°C
°C
±
20
±
30
±
60
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
56
1.5
150
–55 to +150
I
AS
E
AS
26
A
mJ
68
Notes 1.
PW
10
μ
s, Duty cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 50 V, R
G
= 25
,
V
GS
= 20
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
2.23
°
C/W
R
th(ch-A)
83.3
°
C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3481
TO-220AB
2SK3481-S
TO-262
2SK3481-ZJ
TO-263
2SK3481-Z
TO-220SMD
Note
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
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