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參數(shù)資料
| 型號(hào)： | 2SK3480-Z |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 77K |
| 代理商： | 2SK3480-Z |
Data Sheet D15078EJ1V0DS
2
2SK3480
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100
V, V
GS
= 0
V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±20
V, V
DS
= 0
V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 25
A
17
34
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 25
A
25
31
m
R
DS(on)2
V
GS
= 4.5
V, I
D
= 25
A
27
36
m
Input Capacitance
C
iss
V
DS
= 10
V
3600
pF
Output Capacitance
C
oss
V
GS
= 0
V
360
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
190
pF
Turn-on Delay Time
t
d(on)
V
DD
= 50
V, I
D
= 25
A
15
ns
Rise Time
t
r
V
GS
= 10
V
11
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
68
ns
Fall Time
t
f
6.0
ns
Total Gate Charge
Q
G
V
DD
= 80
V
74
nC
Gate to Source Charge
Q
GS
V
GS
= 10
V
10
nC
Gate to Drain Charge
Q
GD
I
D
= 50
A
20
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 50
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 50
A, V
GS
= 0
V
70
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A/
μ
s
180
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
μ
s
Duty Cycle
≤
1%
τ
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3480-Z-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) TO-220 SMD |
| 2SK3480-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3481 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3481-AZ | 功能描述:MOSFET N-CH 100V MP-25/TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3481-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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