參數(shù)資料
型號: 2SK3479
元件分類: JFETs
英文描述: 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: MP-25, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 76K
代理商: 2SK3479
Data Sheet D15077EJ1V0DS
3
2SK3479
TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
1
0.1
100
0.1
1000
1
10
100
TC = 25C
Single Pulse
1000
R
DS(on)
Limited
(at
V
GS
=
10
V)
ID(pulse)
ID(DC)
Po
wer
Dissipation
Limited
DC
PW
=
10
s
100
s
1
ms
10
ms
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
040
20
60
100
140
80
120
160
120
100
80
60
40
20
TC - Case Temperature - C
P
T
-Total
Power
Dissipation
-
W
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
150
125
100
75
50
25
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)
-
Transient
Thermal
Resistance
-
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Rth(ch-C) = 1C/W
Rth(ch-A) = 83.3C/W
相關(guān)PDF資料
PDF描述
2SK3479-S 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SK3479-ZJ 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3479-AZ 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3479-Z-AZ 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3479-Z 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3479-AZ 制造商:Renesas Electronics 功能描述:Nch 100V 83A 11m@10V TO220AB Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 83A 3-Pin(3+Tab) TO-220AB
2SK3479-S 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET
2SK3479-Z 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET
2SK3479-Z-AZ 制造商:Renesas Electronics 功能描述:Nch 100V 83A 11m@10V TO220SMD Bulk 制造商:Renesas Electronics 功能描述:Nch 100V 83A 11m@10V TO220SMD Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,100V,83A,8.8m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 83A 3-Pin(2+Tab) TO-220 SMD
2SK3479-Z-E1-AZ 功能描述:MOSFET 100V N-CH TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件