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參數(shù)資料
| 型號(hào)： | 2SK3475 |
| 廠商： | Toshiba Corporation |
| 英文描述： | VHF-and UHF-band Amplifier Applications |
| 中文描述： | 甚高頻和超高頻波段放大器應(yīng)用 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | 2SK3475 |
2SK3475
2002-01-09
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain cut-off current
I
DSS
V
DS
20 V, V
GS
0 V
5
A
Gate-source leakage current
I
GSS
V
GS
10 V
5
A
Threshold voltage
V
th
V
DS
7.2 V, I
D
2 mA
1.9
2.4
2.9
V
Drain-source on-voltage
V
DS (ON)
V
GS
10 V, I
D
75 mA
87
mV
Forward transconductance
Y
fs
V
DS
7.2 V, I
DS
208 mA
260
mS
Input capacitance
C
iss
V
DS
7.2 V, V
GS
0 V, f 1 MHz
11
pF
Output capacitance
C
oss
V
DS
7.2 V, V
GS
0 V, f 1 MHz
12.5
pF
Output power
P
O
630
mW
Drain efficiency
D
45
%
Power gain
G
P
V
DS
7.2 V,
I
idle
50 mA (V
GS
adjust),
f 520 MHz, P
i
20 mW,
14.9
dB
Low voltage output power
P
OL
V
DS
6.0 V,
I
idle
50 mA (V
GS
adjust),
f 520 MHz, P
i
20 mW,
500
mW
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f 520 MHz, V
DS
7.2 V, I
idle
50 mA, P
i
20 mW)
P
i
Z
G
50
P
O
C1
C2
C5
L1
C7
C8
L3
R1
C9
C10
L4
V
GS
V
DS
C3
C4
L2
C6
Z
L
50
C1: 10 pF
C2: 10 pF
C3: 9 pF
C4: 6 pF
C5: 2200 pF
C6: 2200 pF
C7: 10 F
C8: 10000 pF
C9: 10 F
C10: 10000 pF
L1: 0.8 mm enamel wire, 2.2ID, 1T
L2: 0.8 mm enamel wire, 2.2ID, 1T
L3: 0.8 mm enamel wire, 5.5ID, 4T
L4: 0.8 mm enamel wire, 5.5ID, 8T
R1: 1.5 k
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