- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33499 > 2SK3471 500 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SK3471 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, 2-5K1B, SC-62, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 142K |
| 代理商： | 2SK3471 |
2SK3471
2010-04-13
2
Marking
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-OFF current
IDSS
VDS = 500 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 0.25 A
10
18
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 0.25 A
0.2
0.4
S
Input capacitance
Ciss
75
Reverse transfer capacitance
Crss
7
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
24
pF
Rise time
tr
11
Turn-ON time
ton
18
Fall time
tf
54
Switching time
Turn-OFF time
toff
95
ns
Total gate charge
(gate-source plus gate-drain)
Qg
3.8
Gate-source charge
Qgs
1.9
Gate-drain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 0.5 A
1.9
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
0.5
A
Pulse drain reverse current
(Note 1)
IDRP
1.5
A
Forward voltage (diode)
VDSF
IDR = 0.5 A, VGS = 0 V
1.5
V
Reverse recovery time
trr
190
ns
Reverse recovery charge
Qrr
IDR = 0.5 A, VGS = 0 V,
dIDR/dt = 100 A / μs
380
nC
Note 5: A line beside a Lot No. identifies the indication of product
Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Z
G
Part No.
(or abbreviation code)
Lot No.
Note 5
Duty
≤ 1%, tw = 10 μs
0 V
10 V
VGS
RL = 1 kΩ
VDD ≈ 250 V
ID = 0.25 A
VOUT
4.7
Ω
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3472 | 1 A, 450 V, 4.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3472 | 1 A, 450 V, 4.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3473 | 9 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3476 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK3479 | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3471(TE12L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 500V 0.5A 4-Pin(3+Tab) PW-Mini T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 0.5A, 500V, SOT89 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 0.5A, 500V, SOT89; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:500V; On Resistance Rds(on):18ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power ;RoHS Compliant: Yes 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 500V 0.5A SOT89 |
| 2SK3471(TE12LF) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 0.5A 500V SOT89 |
| 2SK3471_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications |
| 2SK3471_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications |
| 2SK3472 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N-Channel MOS Type Switching Regulator Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。