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參數(shù)資料
| 型號： | 2SK3471 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型（喝醉MOSV） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 2SK3471 |
2SK3471
2002-09-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS
V
)
2SK3471
Switching Regulator and DC-DC Converter Applications
Low drain-source ON resistance: R
DS (ON)
= 10
(typ.)
High forward transfer admittance: |Y
fs
| = 0.4 S (typ.)
Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
500
V
Drain-gate voltage (R
GS
20 k )
V
DGR
500
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
0.5
Drain current
Pulse (Note 1)
I
DP
1.5
A
Drain power dissipation
P
D
0.5
W
Drain power dissipation
(Note 2)
P
D
1.5
W
Single pulse avalanche energy
(Note 3)
E
AS
14.3
mJ
Avalanche current
I
AR
0.5
A
Repetitive avalanche energy (Note 4)
E
AR
0.05
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
R
th (ch-a)
250
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm 25.4 mm 0.8 mm)
Note 3: V
DD
90 V, T
ch
25°C (initial), L 100 mH, R
G
25 , I
AR
0.5 A
Note 4: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1B
Weight: 0.05 g (typ.)
Marking
Z G
(The two digits represent the
part number.)
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