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參數(shù)資料
| 型號： | 2SK3467 |
| 元件分類： | JFETs |
| 英文描述： | 80 A, 20 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 67K |
| 代理商： | 2SK3467 |
Data Sheet D14991EJ1V0DS
2
2SK3467
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 40 A
20
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 40 A
4.8
6.0
m
RDS(on)2
VGS = 4.5 V, ID = 40 A
6.7
9.5
m
Input Capacitance
Ciss
VDS = 10 V
2800
pF
Output Capacitance
Coss
VGS = 0 V
1200
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
600
pF
Turn-on Delay Time
td(on)
VDD = 10 V , ID = 40 A
16
ns
Rise Time
tr
VGS(on) = 10 V
23
ns
Turn-off Delay Time
td(off)
RG = 10
74
ns
Fall Time
tf
31
ns
Total Gate Charge
QG
VDD = 16 V
55
nC
Gate to Source Charge
QGS
VGS = 10 V
9
nC
Gate to Drain Charge
QGD
ID = 80 A
17
nC
Body Diode Forward Voltage
VF(S-D)
IF = 80 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 80 A, VGS = 0 V
44
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
40
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS
10%
90%
10%
0
VDS
90%
td(on)
tr
td(off)
tf
τ
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3467-ZK | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3468 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N CHANNEL SILICON POWER MOSFET |
| 2SK3468-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.4Ohm;ID +/-14A;TO-220AB;PD 195W;VGS +/-30 |
| 2SK3468-01_03 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOSFET |
| 2SK3468-01SC | 制造商:Fuji Electric 功能描述: |
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