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參數(shù)資料
| 型號(hào)： | 2SK3466 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | 2SK3466 |
2SK3466
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3466
Chopper Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)
High forward transfer admittance: Yfs = 4.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
5
Drain current
Pulse
(Note 1)
IDP
20
A
Drain power dissipation (Tc
= 25°C)
PD
50
W
Single pulse avalanche energy
(Note 2)
EAS
180
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-9F1C
Weight: 0.74 g (typ.)
1
3
4
相關(guān)PDF資料 |
PDF描述 |
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| 2SK3466 | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3481-S-AZ | 30 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3481-S | 30 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3481-ZJ-AZ | 30 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3481-AZ | 30 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3466(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 5A SC-97 |
| 2SK3466_06 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator Applications |
| 2SK3466_10 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Chopper Regulator Applications |
| 2SK3467 | 制造商:KEXIN 制造商全稱(chēng):Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3467-ZK | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
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